Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Identifieur interne : 013A96 ( Main/Repository ); précédent : 013A95; suivant : 013A97Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Auteurs : RBID : Pascal:99-0440382Descripteurs français
- Pascal (Inist)
- 8105E, 6865, 8115H, 6835B, 6150N, 6845D, 6835F, Etude expérimentale, Indium nitrure, Gallium nitrure, Hétérojonction, Epitaxie jet moléculaire, Substrat, Dépendance température, Diffraction RX, Diffraction électron, Composition chimique, Ségrégation, Désorption, Indium composé, Gallium composé, Superréseau semiconducteur, Croissance semiconducteur, Semiconducteur III-V, RHEED, Stoechiométrie, Ségrégation surface.
English descriptors
- KwdEn :
- Chemical composition, Desorption, Electron diffraction, Experimental study, Gallium compounds, Gallium nitrides, Heterojunctions, III-V semiconductors, Indium compounds, Indium nitrides, Molecular beam epitaxy, RHEED, Segregation, Semiconductor growth, Semiconductor superlattices, Stoichiometry, Substrates, Surface segregation, Temperature dependence, XRD.
Abstract
Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into InxGa1-xN epitaxial materials. HRXRD results for InxGa1-xN/GaN superlattices reveal a particularly strong dependence of average alloy composition x upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x with increasing growth temperature within the narrow range 590-670°C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy</title><author><name sortKey="Osteen, M L" uniqKey="Osteen M">M. L. Osteen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, Oklahoma State University, Stillwater, Oklahoma 74078-3072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Physics Department, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Fedler, F" uniqKey="Fedler F">F. Fedler</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, Oklahoma State University, Stillwater, Oklahoma 74078-3072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Physics Department, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Hauenstein, R J" uniqKey="Hauenstein R">R. J. Hauenstein</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Physics Department, Oklahoma State University, Stillwater, Oklahoma 74078-3072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Physics Department, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0440382</idno><date when="1999-10-11">1999-10-11</date><idno type="stanalyst">PASCAL 99-0440382 AIP</idno><idno type="RBID">Pascal:99-0440382</idno><idno type="wicri:Area/Main/Corpus">014481</idno><idno type="wicri:Area/Main/Repository">013A96</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term><term>Desorption</term><term>Electron diffraction</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>Heterojunctions</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium nitrides</term><term>Molecular beam epitaxy</term><term>RHEED</term><term>Segregation</term><term>Semiconductor growth</term><term>Semiconductor superlattices</term><term>Stoichiometry</term><term>Substrates</term><term>Surface segregation</term><term>Temperature dependence</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>6865</term><term>8115H</term><term>6835B</term><term>6150N</term><term>6845D</term><term>6835F</term><term>Etude expérimentale</term><term>Indium nitrure</term><term>Gallium nitrure</term><term>Hétérojonction</term><term>Epitaxie jet moléculaire</term><term>Substrat</term><term>Dépendance température</term><term>Diffraction RX</term><term>Diffraction électron</term><term>Composition chimique</term><term>Ségrégation</term><term>Désorption</term><term>Indium composé</term><term>Gallium composé</term><term>Superréseau semiconducteur</term><term>Croissance semiconducteur</term><term>Semiconducteur III-V</term><term>RHEED</term><term>Stoechiométrie</term><term>Ségrégation surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into In<sub>x</sub>Ga<sub>1-x</sub>N epitaxial materials. HRXRD results for In<sub>x</sub>Ga<sub>1-x</sub>N/GaN superlattices reveal a particularly strong dependence of average alloy composition x upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x with increasing growth temperature within the narrow range 590-670°C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>OSTEEN (M. L.)</s1></fA11><fA11 i1="02" i2="1"><s1>FEDLER (F.)</s1></fA11><fA11 i1="03" i2="1"><s1>HAUENSTEIN (R. J.)</s1></fA11><fA14 i1="01"><s1>Physics Department, Oklahoma State University, Stillwater, Oklahoma 74078-3072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2280-2282</s1></fA20><fA21><s1>1999-10-11</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0440382</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Reflection high-energy electron diffraction (RHEED) and laterally spatially resolved high resolution x-ray diffraction (HRXRD) have been used to identify and characterize rf plasma-assisted molecular-beam epitaxial growth factors which strongly affect the efficiency of In incorporation into In<sub>x</sub>Ga<sub>1-x</sub>N epitaxial materials. HRXRD results for In<sub>x</sub>Ga<sub>1-x</sub>N/GaN superlattices reveal a particularly strong dependence of average alloy composition x upon both substrate growth temperature and incident V/III flux ratio. For fixed flux ratio, results reveal a strong thermally activated behavior, with over an order-of-magnitude decrease in x with increasing growth temperature within the narrow range 590-670°C. Within this same range, a further strong dependence upon V/III flux ratio is observed. The decreased In incorporation at elevated substrate temperatures is tentatively attributed to In surface-segregation and desorption processes. RHEED observations support this segregation/desorption interpretation to account for In loss. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="05" i2="3"><s0>001B60A50N</s0></fC02><fC02 i1="06" i2="3"><s0>001B60H45D</s0></fC02><fC02 i1="07" i2="3"><s0>001B60H35F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6150N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>6845D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>6835F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium nitrure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium nitrides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium nitrure</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium nitrides</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Hétérojonction</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Heterojunctions</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Substrat</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Substrates</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Dépendance température</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Temperature dependence</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Diffraction électron</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Electron diffraction</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Composition chimique</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Chemical composition</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Ségrégation</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Segregation</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Désorption</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Desorption</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>RHEED</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>RHEED</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Stoechiométrie</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Stoichiometry</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Ségrégation surface</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Surface segregation</s0></fC03><fN21><s1>277</s1></fN21><fN47 i1="01" i2="1"><s0>9938M000048</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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